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1/11 april 2001 SD57045-01 rf power transistors the ldmost family n-channel enhancement-mode lateral mosfets ? excellent thermal stability ? common source configuration ? p out = 45w with 13 db gain @ 945 mhz ? beo free package description the SD57045-01 is a common source n-channel enhancement-mode lateral field-effect rf power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 ghz. the SD57045-01 is designed for high gain and broadband performance operating in common source mode at 28 v. it is ideal for base station ap- plications requiring high linearity. order code SD57045-01 branding SD57045-01 m250 epoxy sealed absolute maximum ratings (t case =25 c) symbol parameter value unit v (br)dss drain-source voltage 65 v v dgr drain-gate voltage (r gs =1m w) 65 v v gs gate-source voltage 20 v i d drain current 5 a p diss power dissipation (@ tc = 70 c) 93 w tj max. operating junction temperature 200 c t stg storage temperature -65 to + 200 c thermal data r th(j-c) junction -case thermal resistance 1.4 c/w pin connection 1 3 2 1. drain 2. gate 3. source
SD57045-01 2/11 electrical specification (t case =25 c) static dynamic symbol test conditions min. typ. max. unit v (br)dss v gs =0v i ds =1ma 65 v i dss v gs =0v v ds =28v 1 m a i gss v gs =20v v ds =0v 1 m a v gs(q) v ds =28v i d = 250 ma 2.5 5.0 v v ds(on) v gs =10v i d =3a 0.7 0.9 v g fs v ds =10v i d =5a 2.0 2.7 mho c iss v gs =0v v ds = 28 v f = 1 mhz 80 pf c oss v gs =0v v ds = 28 v f = 1 mhz 40 pf c rss v gs =0v v ds = 28 v f = 1 mhz 3.2 pf symbol test conditions min. typ. max. unit p out v dd =28v i dq = 250 ma f = 945 mhz 45 w imd3 v dd =28v i dq = 250 ma p out =45wpep -32 -28 dbc g ps v dd =28v i dq = 250 ma p out =45wpep 13 15 db h d v dd =28v i dq = 250 ma p out =45wpep 33 40 % load mismatch v dd =28v i dq = 250 ma p out = 45 w f = 945 mhz all phase angles 10:1 vswr freq. z in ( w )z dl ( w ) 925 mhz 1.27 + j 0.82 2.22 - j 1.63 930 mhz 1.21 + j 0.79 2.24 - j 1.61 945 mhz 1.04 + j 0.71 2.30 - j 1.52 960 mhz 0.93 + j 0.43 2.37 - j 1.37 965 mhz 0.91 + j 0.41 2.43 - j 1.36 ref. 7133620b typical input typical drain zin z d g d s impedance data note: f 1 = 945 mhz pep f 2 = 945.1 mhz
3/11 SD57045-01 typical performance capacitance vs. drain voltage 0 1020304050 vds (v) 1 10 100 1000 c(pf) ciss coss crss f = 1 mhz gate-source voltage vs. case temperature -25 0 25 50 75 tcase ( c) 0.96 0.98 1 1.02 1.04 vgs (normalized) i d = 250 ma id =1a i d = 1.5 a i d =2a i d =3a v ds =10v drain current vs. gate voltage 2.5 3 3.5 4 4.5 5 vgs (v) 0 0.5 1 1.5 2 2.5 3 3.5 4 id (a) v ds =10 v safe operating area 1 10 100 x-axis 0.1 1 10 y-axis tc = 25 c tc = 70 c tc = 100 c o o o
SD57045-01 4/11 typical performance (cw) output power and power gain vs. input power 0 0.5 1 1.5 2 2.5 3 pin (w) 0 10 20 30 40 50 60 70 pout (w) 4 6 8 10 12 14 16 18 gp (db) gp pout v dd =28v i dq = 250 ma f = 945 mhz power gain vs. output power 0.1 1 10 100 pout (w) 6 8 10 12 14 16 18 20 gp (db) idq = 450ma idq = 250 ma idq = 150ma idq = 75 ma vdd = 28 v f = 945 mhz broadband power performance 925 930 935 940 945 950 955 960 965 f, frequency (mhz) 8 9 10 11 12 13 14 15 16 gp, gain (db) 4 6 8 10 12 14 16 18 20 rtl (db) gain return loss output power vs. drain voltage 12 16 20 24 28 32 36 vds (v) 10 20 30 40 50 60 70 80 90 pout (w) vdd = 28 v idq = 250 ma f = 945 mhz pin = 2 w pin = 1 w pin =3 w output power vs gate biat voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 vgs (v) 0 10 20 30 40 50 60 pout (w) v dd =28v pin = 1.5w f = 945 mhz efficiency vs. output power 0 102030405060 pout (w) 0 10 20 30 40 50 60 nc (%) freq = 945 mhz v dd =28v i dq = 250ma
5/11 SD57045-01 typical performance (pep) intermodulation distortion vs. output power 0 102030405060 pout (wpep) -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 imd (dbc) imd3 imd5 imd7 v dd =28v i dq = 250 ma f1 = 945 mhz f2 = 945.1 mhz intermodulation distortion vs. output power 0.1 1 10 100 pout (w) -80 -70 -60 -50 -40 -30 -20 -10 0 imd3 (dbc) idq = 75 ma idq = 150 ma idq = 250 ma idq = 450 ma v dd =28v f1 = 945 mhz f2 = 945.1 mhz case a third order intercept point 10 15 20 25 30 35 40 45 pin (dbm) -40 -30 -20 -10 0 10 20 30 40 50 60 70 pout (dbm) fundamental imd3 v ds =26v i d = 1.8 a f1 = 945 mhz f2 = 945.1 mhz efficiency vs. output power (pep) 0 102030405060 pout (wpep) 0 10 20 30 40 50 60 nd (%) f1 = 945 mhz f2 = 945.1 mhz v dd =28v i dq = 250ma output power vs. input power power gain vs. input power 0 0.5 1 1.5 2 pin (w) 0 10 20 30 40 50 60 pout (w) v dd =28v i dq = 250 ma f1 = 945mhz f2 = 945.1mhz 0 10203040506070 pin (w) 12 13 14 15 16 17 18 gp (db) v dd =28v i dq = 250 ma f1 = 945 mhz f2 = 945.1 mhz
SD57045-01 6/11 freq (mhz) ls 11 l s 11 f ls 21 l s 21 f ls 12 l s12 f ls 22 l s 22 f 50 0.902 -168 14.591 88 0.015 -4 0.781 -170 60 0.902 -169 13.845 88 0.015 -4 0.781 -170 70 0.902 -168 13.069 87 0.014 -5 0.781 -171 80 0.902 -170 12.266 86 0.014 -5 0.781 -171 90 0.902 -170 11.436 86 0.014 -5 0.782 -171 100 0.903 -171 10.587 84 0.014 -6 0.782 -172 150 0.905 -173 6.604 78 0.014 -9 0.788 -173 200 0.910 -174 4.670 71 0.013 -11 0.799 -173 250 0.916 -174 3.588 66 0.013 -12 0.812 -173 300 0.921 -174 2.884 61 0.012 -11 0.825 -173 350 0.927 -175 2.379 56 0.011 -13 0.839 -173 400 0.933 -175 2.005 52 0.011 -14 0.853 -173 450 0.939 -175 1.719 48 0.010 -14 0.866 -173 500 0.944 -175 1.494 45 0.010 -15 0.878 -173 550 0.950 -175 1.317 42 0.009 -14 0.889 -173 600 0.954 -175 1.169 40 0.008 -12 0.899 -173 650 0.957 -175 1.051 38 0.007 -10 0.908 -174 700 0.960 -175 0.942 36 0.007 -5 0.916 -174 750 0.963 -175 0.853 34 0.006 -1 0.923 -174 800 0.966 -175 0.770 32 0.005 7 0.930 -174 850 0.968 -176 0.696 31 0.005 16 0.935 -174 900 0.970 -176 0.630 29 0.005 28 0.940 -174 950 0.972 -176 0.568 28 0.005 40 0.944 -174 1000 0.973 -176 0.515 27 0.005 50 0.948 -174 1050 0.974 -176 0.465 26 0.006 59 0.950 -174 1100 0.926 -177 0.422 25 0.006 66 0.950 -174 1150 0.977 -177 0.301 25 0.007 74 0.949 -175 1200 0.979 -177 0.348 24 0.008 79 0.946 -176 1250 0.980 -177 0.317 24 0.009 83 0.941 -177 1300 0.982 -177 0.292 24 0.010 84 0.934 -178 1350 0.984 -177 0.267 24 0.011 85 0.923 180 1400 0.986 -177 0.248 24 0.012 86 0.910 177 1450 0.989 -177 0.231 24 0.013 87 0.892 175 1500 0.990 -177 0.223 25 0.013 88 0.898 172 common source s-parameter (v ds = 13.5 v i ds =2a)
7/11 SD57045-01 common source s-parameter (v ds =28v i ds =2a) freq (mhz) ls 11 l s 11 f ls 21 l s 21 f ls 12 l s12 f ls 22 l s 22 f 50 0.867 -158 20.011 91 0.013 2 0.675 -163 60 0.870 -159 18.979 90 0.013 1 0.676 -164 70 0.873 -160 17.907 89 0.013 -0 0.677 -164 80 0.876 -162 16.794 88 0.013 -1 0.679 -165 90 0.880 -163 15.649 87 0.013 -2 0.681 -165 100 0.884 -164 14.478 86 0.013 -3 0.683 -165 150 0.904 -169 8.997 77 0.012 -9 0.700 -167 200 0.915 -171 6.310 70 0.012 -14 0.722 -167 250 0.920 -172 4.797 62 0.011 -18 0.748 -167 300 0.927 -173 3.813 56 0.010 -21 0.774 -167 350 0.933 -173 3.106 51 0.009 -22 0.799 -167 400 0.940 -173 2.589 47 0.009 -23 0.823 -168 450 0.947 -174 2.194 43 0.008 -23 0.843 -168 500 0.953 -174 1.890 40 0.007 -23 0.862 -168 550 0.958 -174 1.652 37 0.006 -21 0.877 -169 600 0.963 -174 1.456 34 0.006 -17 0.891 -169 650 0.966 -174 1.299 32 0.005 -12 0.904 -169 700 0.968 -175 1.157 30 0.004 -4 0.914 -170 750 0.971 -175 1.039 28 0.004 6 0.923 -170 800 0.974 -175 0.932 26 0.004 18 0.932 -170 850 0.976 -175 0.838 25 0.004 31 0.940 -172 900 0.977 -176 0.755 23 0.004 42 0.946 -170 950 0.979 -176 0.678 22 0.004 54 0.951 -170 1000 0.980 -176 0.613 21 0.005 61 0.955 -171 1050 0.981 -176 0.550 20 0.006 69 0.957 -171 1100 0.982 -177 0.498 19 0.006 74 0.958 -171 1150 0.983 -177 0.449 19 0.007 28 0.957 -172 1200 0.985 -177 0.410 19 0.008 80 0.954 -173 1250 0.985 -177 0.373 18 0.009 83 0.949 -174 1300 0.986 -177 0.344 18 0.010 86 0.940 -175 1350 0.987 -177 0.314 18 0.010 88 0.929 -177 1400 0.989 -177 0.292 19 0.011 90 0.913 -180 1450 0.991 -177 0.273 19 0.012 93 0.896 -177 1500 0.992 -177 0.263 19 0.013 94 0.884 -175
SD57045-01 8/11 945 mhz test circuit schematic 945 mhz test circuit component part list component descriptio n c19 220 m f/ 63v aluminum electrolytic radial lead capacitor c18, c14 0.1 m f/500 v surface mount ceramic chip capacitor c17 100 pf atc 100b surface mount ceramic chip capacitor c16, c12, c11, c1 47 pf atc 100b surface mount ceramic chip capacitor c15 10 m f/50 v aluminum electrolytic radial lead capacitor c13 1000 pf atc 700b surface mount ceramic chip capacitor c10 3.0 pf atc 100b surface mount ceramic chip capacitor c9, c2 0.8 - 8.0 pf giga trim variable capacitor c8 6.2 pf atc 100b surface mount ceramic chip capacitor c7, c6, c5, c4 10 pf atc 100b surface mount ceramic chip capacitor c3 3 pf atc 100b surface mount ceramic chip capacitor r3 120 ohm, 2w surface mount chip resistor r2 4.7m ohm, 1w surface mount chip resistor r1 18k ohm, 1w surface mount chip resistor fb2 shield bead surface mount emi fb1 shield bead surface mount emi l2 inductor, 5turns air wound #22awg, id=0.059[1.49], nylon coated magnet wire l1 inductor, 5turns air wound #22awg, id=0.059[1.49], nylon coated magnet wire pcb woven fiberglass reinforced ptfe 0.080o thk, e r=2.55, 2 oz edcu both side + g v rf in v d rf out + + d g + n otes: 1. dim ensio ns at c omponen t symbols ar e r efer en ce for c omponen t placemen t. 2. gap betwee n groun d & tra nsmi ssion line = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] typ. 3. dim ensio ns of inpu t and outpu t c omponent from ed ge of tran smis sion lines. ref. 7143566a
9/11 SD57045-01 945 mhz production test fixture 945 mhz test circuit photomaster 6.4 inches 4 inches ref. 7143566a
SD57045-01 10/11 controlling dimension: inches 1022729b m250 (.230 x .360 2l n/herm w/flg) mechanical data mm inch min. typ. max min. typ. max a 5.21 5.71 0.205 0.225 b 2.16 2.92 0.085 0.115 c 5.59 6.09 0.220 0.240 d 8.89 9.40 0.350 0.370 e 9.40 9.91 0.370 0.390 f 0.11 0.15 0.004 0.006 g 0.89 1.14 0.035 0.045 h 1.45 1.70 0.057 0.067 i 2.67 3.94 0.105 0.155 dim.
11/11 SD57045-01 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of stmicroelectronics. the st logo is registered trademark of stmicroelectronics ? 2001 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a . http://w ww.st.com

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